onsemi FQA32N20C is a FQA32N20C from onsemi, part of the MOSFETs. It is designed for 200V 32A 68mΩ@10V,16A 204W 4V@250uA 1PCSNChannel TO-3P MOSFETs ROHS. This product comes in a TO-3P package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 32A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 68mΩ@10V,16A
- Power Dissipation (Pd): 204W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 185pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.22nF@25V
- Total Gate Charge (Qg@Vgs): 110nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.5 grams.
More on FQA32N20C
Full Specifications of FQA32N20C
| Model Number | FQA32N20C |
| Model Name | onsemi FQA32N20C |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 200V 32A 68mΩ@10V,16A 204W 4V@250uA 1PCSNChannel TO-3P MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 7.500 grams / 0.264555 oz |
| Package / Case | TO-3P |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 32A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 68mΩ@10V,16A |
| Power Dissipation (Pd) | 204W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2.22nF@25V |
| Total Gate Charge (Qg@Vgs) | 110nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |