onsemi FQB19N20CTM is a FQB19N20CTM from onsemi, part of the MOSFETs. It is designed for 200V 19A 140mΩ@10V,9.5A 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 19A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 140mΩ@10V,9.5A
- Power Dissipation (Pd): 3.13W;139W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 85pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 830pF@25V
- Total Gate Charge (Qg@Vgs): 40nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.4 grams.
More on FQB19N20CTM
Full Specifications of FQB19N20CTM
| Model Number | FQB19N20CTM |
| Model Name | onsemi FQB19N20CTM |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 200V 19A 140mΩ@10V,9.5A 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.400 grams / 0.084658 oz |
| Package / Case | D2PAK |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 19A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 140mΩ@10V,9.5A |
| Power Dissipation (Pd) | 3.13W;139W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 830pF@25V |
| Total Gate Charge (Qg@Vgs) | 40nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |