onsemi FQD19N10LTM is a FQD19N10LTM from onsemi, part of the MOSFETs. It is designed for 100V 15.6A 100mΩ@7.8A,10V 2V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 15.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@7.8A,10V
- Power Dissipation (Pd): 2.5W;50W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 870pF@25V
- Total Gate Charge (Qg@Vgs): 18nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.478 grams.
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Full Specifications of FQD19N10LTM
| Model Number | FQD19N10LTM |
| Model Name | onsemi FQD19N10LTM |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 100V 15.6A 100mΩ@7.8A,10V 2V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.478 grams / 0.016861 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 15.6A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 100mΩ@7.8A,10V |
| Power Dissipation (Pd) | 2.5W;50W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 870pF@25V |
| Total Gate Charge (Qg@Vgs) | 18nC@5V |
| Operating Temperature | -55℃~+150℃@(Tj) |