onsemi FQP6N80C is a FQP6N80C from onsemi, part of the MOSFETs. It is designed for 800V 5.5A 2.5Ω@10V,2.75A 158W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 5.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@10V,2.75A
- Power Dissipation (Pd): 158W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.31nF@25V
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.695 grams.
More on FQP6N80C
Full Specifications of FQP6N80C
| Model Number | FQP6N80C |
| Model Name | onsemi FQP6N80C |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 800V 5.5A 2.5Ω@10V,2.75A 158W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.695 grams / 0.095063 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 800V |
| Continuous Drain Current (Id) | 5.5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.5Ω@10V,2.75A |
| Power Dissipation (Pd) | 158W |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.31nF@25V |
| Total Gate Charge (Qg@Vgs) | 30nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |