onsemi RFP50N06 is a RFP50N06 from onsemi, part of the MOSFETs. It is designed for 60V 50A 131W 22mΩ@50A,10V 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 50A
- Power Dissipation (Pd): 131W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@50A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.02nF@25V
- Total Gate Charge (Qg@Vgs): 150nC@20V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.
More on RFP50N06
Full Specifications of RFP50N06
| Model Number | RFP50N06 |
| Model Name | onsemi RFP50N06 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 50A 131W 22mΩ@50A,10V 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.640 grams / 0.093123 oz |
| Package / Case | TO-220AB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 50A |
| Power Dissipation (Pd) | 131W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 22mΩ@50A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2.02nF@25V |
| Total Gate Charge (Qg@Vgs) | 150nC@20V |
| Operating Temperature | -55℃~+175℃@(Tj) |