onsemi FQU5N60CTU is a FQU5N60CTU from onsemi, part of the MOSFETs. It is designed for 600V 2.8A 2.5Ω@10V,1.4A 4V@250uA 1PCSNChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 2.8A
- Power Dissipation (Pd): 2.5W;49W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@10V,1.4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 670pF@25V
- Total Gate Charge (Qg@Vgs): 19nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.613 grams.
More on FQU5N60CTU
Full Specifications of FQU5N60CTU
| Model Number | FQU5N60CTU |
| Model Name | onsemi FQU5N60CTU |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 2.8A 2.5Ω@10V,1.4A 4V@250uA 1PCSNChannel TO-251 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.613 grams / 0.021623 oz |
| Package / Case | TO-251 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 2.8A |
| Power Dissipation (Pd) | 2.5W;49W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.5Ω@10V,1.4A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 670pF@25V |
| Total Gate Charge (Qg@Vgs) | 19nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |