onsemi FW342-TL-E is a FW342-TL-E from onsemi, part of the MOSFETs. It is designed for 30V 1.8W 33mΩ@6A,10V 1PCSNChannel+1PCSPChannel SOIC-8-175mil MOSFETs ROHS. This product comes in a SOIC-8-175mil package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 6A;5A
- Power Dissipation (Pd): 1.8W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@6A,10V
- Type: 1PCSNChannel+1PCSPChannel
- Input Capacitance (Ciss@Vds): 850pF@10V
- Total Gate Charge (Qg@Vgs): 16nC@10V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FW342-TL-E
Full Specifications of FW342-TL-E
| Model Number | FW342-TL-E |
| Model Name | onsemi FW342-TL-E |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 1.8W 33mΩ@6A,10V 1PCSNChannel+1PCSPChannel SOIC-8-175mil MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | SOIC-8-175mil |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 6A;5A |
| Power Dissipation (Pd) | 1.8W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 33mΩ@6A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Type | 1PCSNChannel+1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 850pF@10V |
| Total Gate Charge (Qg@Vgs) | 16nC@10V |
| Operating Temperature | - |