onsemi HUF76409D3 is a HUF76409D3 from onsemi, part of the MOSFETs. It is designed for 60V 18A 63mΩ@18A,10V 49W 3V@250uA 1PCSNChannel IPAK MOSFETs ROHS. This product comes in a IPAK package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 63mΩ@18A,10V
- Power Dissipation (Pd): 49W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 485pF@25V
- Total Gate Charge (Qg@Vgs): 15nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on HUF76409D3
Full Specifications of HUF76409D3
| Model Number | HUF76409D3 |
| Model Name | onsemi HUF76409D3 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 18A 63mΩ@18A,10V 49W 3V@250uA 1PCSNChannel IPAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | IPAK |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 18A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 63mΩ@18A,10V |
| Power Dissipation (Pd) | 49W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 485pF@25V |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |