onsemi IRFS640A is a IRFS640A from onsemi, part of the MOSFETs. It is designed for 200V 9.8A 180mΩ@4.9A,10V 43W 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS. This product comes in a TO-220F package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 9.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@4.9A,10V
- Power Dissipation (Pd): 43W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.5nF@25V
- Total Gate Charge (Qg@Vgs): 58nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRFS640A
Full Specifications of IRFS640A
| Model Number | IRFS640A |
| Model Name | onsemi IRFS640A |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 200V 9.8A 180mΩ@4.9A,10V 43W 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-220F |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 9.8A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 180mΩ@4.9A,10V |
| Power Dissipation (Pd) | 43W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.5nF@25V |
| Total Gate Charge (Qg@Vgs) | 58nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |