IRF630A by onsemi – Specifications

onsemi IRF630A is a IRF630A from onsemi, part of the MOSFETs. It is designed for 200V 9A 400mΩ@4.5A,10V 72W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 400mΩ@4.5A,10V
  • Power Dissipation (Pd): 72W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 650pF@25V
  • Total Gate Charge (Qg@Vgs): 29nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRF630A

Model NumberIRF630A
Model Nameonsemi IRF630A
CategoryMOSFETs
Brandonsemi
Description200V 9A 400mΩ@4.5A,10V 72W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)9A
Drain Source On Resistance (RDS(on)@Vgs,Id)400mΩ@4.5A,10V
Power Dissipation (Pd)72W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)650pF@25V
Total Gate Charge (Qg@Vgs)29nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - IRF630A With Other 200 Models

Related Models - IRF630A Alternative

Scroll to Top