onsemi IRF630A is a IRF630A from onsemi, part of the MOSFETs. It is designed for 200V 9A 400mΩ@4.5A,10V 72W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 9A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 400mΩ@4.5A,10V
- Power Dissipation (Pd): 72W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 650pF@25V
- Total Gate Charge (Qg@Vgs): 29nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRF630A
Full Specifications of IRF630A
Model Number | IRF630A |
Model Name | onsemi IRF630A |
Category | MOSFETs |
Brand | onsemi |
Description | 200V 9A 400mΩ@4.5A,10V 72W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-220 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 200V |
Continuous Drain Current (Id) | 9A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 400mΩ@4.5A,10V |
Power Dissipation (Pd) | 72W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 650pF@25V |
Total Gate Charge (Qg@Vgs) | 29nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |