onsemi NDB6060L is a NDB6060L from onsemi, part of the MOSFETs. It is designed for 60V 48A 100W 20mΩ@10V,24A 2V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 48A
- Power Dissipation (Pd): 100W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@10V,24A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2nF@25V
- Total Gate Charge (Qg@Vgs): 60nC@5V
- Operating Temperature: -65℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.597 grams.
More on NDB6060L
Full Specifications of NDB6060L
| Model Number | NDB6060L |
| Model Name | onsemi NDB6060L |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 48A 100W 20mΩ@10V,24A 2V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.597 grams / 0.056333 oz |
| Package / Case | D2PAK |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 48A |
| Power Dissipation (Pd) | 100W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20mΩ@10V,24A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 2nF@25V |
| Total Gate Charge (Qg@Vgs) | 60nC@5V |
| Operating Temperature | -65℃~+175℃@(Tj) |