onsemi NDB6020P is a NDB6020P from onsemi, part of the MOSFETs. It is designed for 20V 24A 60W 50mΩ@12A,4.5V 1V@250uA 1PCSPChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 24A
- Power Dissipation (Pd): 60W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@12A,4.5V
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 1.59nF@10V
- Total Gate Charge (Qg@Vgs): 35nC@5V
- Operating Temperature: -65℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NDB6020P
Full Specifications of NDB6020P
| Model Number | NDB6020P |
| Model Name | onsemi NDB6020P |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 20V 24A 60W 50mΩ@12A,4.5V 1V@250uA 1PCSPChannel D2PAK(TO-263) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | D2PAK(TO-263) |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | |
| Drain Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 24A |
| Power Dissipation (Pd) | 60W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@12A,4.5V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 1.59nF@10V |
| Total Gate Charge (Qg@Vgs) | 35nC@5V |
| Operating Temperature | -65℃~+175℃@(Tj) |