NDS335N by onsemi – Specifications

onsemi NDS335N is a NDS335N from onsemi, part of the MOSFETs. It is designed for 20V 1.7A 110mΩ@1.7A,4.5V 500mW 1V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 1.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@1.7A,4.5V
  • Power Dissipation (Pd): 500mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 240pF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.

Full Specifications of NDS335N

Model NumberNDS335N
Model Nameonsemi NDS335N
CategoryMOSFETs
Brandonsemi
Description20V 1.7A 110mΩ@1.7A,4.5V 500mW 1V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.030 grams / 0.001058 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)1.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)110mΩ@1.7A,4.5V
Power Dissipation (Pd)500mW
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)240pF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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