NTHD4102PT1G by onsemi – Specifications

onsemi NTHD4102PT1G is a NTHD4102PT1G from onsemi, part of the MOSFETs. It is designed for 20V 2.9A 1.1W 80mΩ@4.5V,2.9A 1.5V@250uA 2 P-Channel SMD-8P MOSFETs ROHS. This product comes in a SMD-8P package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 2.9A
  • Power Dissipation (Pd): 1.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@4.5V,2.9A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 2 P-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.3 grams.

Full Specifications of NTHD4102PT1G

Model NumberNTHD4102PT1G
Model Nameonsemi NTHD4102PT1G
CategoryMOSFETs
Brandonsemi
Description20V 2.9A 1.1W 80mΩ@4.5V,2.9A 1.5V@250uA 2 P-Channel SMD-8P MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.300 grams / 0.010582 oz
Package / CaseSMD-8P
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)2.9A
Power Dissipation (Pd)1.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)80mΩ@4.5V,2.9A
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type2 P-Channel

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