NTMFD5C674NLT1G by onsemi – Specifications

onsemi NTMFD5C674NLT1G is a NTMFD5C674NLT1G from onsemi, part of the MOSFETs. It is designed for 60V 14.4mΩ@10A,10V 2.2V@25uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS. This product comes in a DFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 11A;42A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14.4mΩ@10A,10V
  • Power Dissipation (Pd): 3W;37W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@25uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 640pF@25V
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of NTMFD5C674NLT1G

Model NumberNTMFD5C674NLT1G
Model Nameonsemi NTMFD5C674NLT1G
CategoryMOSFETs
Brandonsemi
Description60V 14.4mΩ@10A,10V 2.2V@25uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)11A;42A
Drain Source On Resistance (RDS(on)@Vgs,Id)14.4mΩ@10A,10V
Power Dissipation (Pd)3W;37W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@25uA
Reverse Transfer Capacitance (Crss@Vds)-
Type2 N-Channel
Input Capacitance (Ciss@Vds)640pF@25V
Total Gate Charge (Qg@Vgs)10nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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