onsemi NVMFD5873NLT1G is a NVMFD5873NLT1G from onsemi, part of the MOSFETs. It is designed for 60V 10A 3.1W 13mΩ@10V,15A 2.5V@250uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS. This product comes in a DFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 10A
- Power Dissipation (Pd): 3.1W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@10V,15A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 2 N-Channel
- Input Capacitance (Ciss@Vds): 1.56nF@25V
- Total Gate Charge (Qg@Vgs): 30.5nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.134 grams.
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Full Specifications of NVMFD5873NLT1G
| Model Number | NVMFD5873NLT1G |
| Model Name | onsemi NVMFD5873NLT1G |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 10A 3.1W 13mΩ@10V,15A 2.5V@250uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.134 grams / 0.004727 oz |
| Package / Case | DFN-8(5x6) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 10A |
| Power Dissipation (Pd) | 3.1W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 13mΩ@10V,15A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 2 N-Channel |
| Input Capacitance (Ciss@Vds) | 1.56nF@25V |
| Total Gate Charge (Qg@Vgs) | 30.5nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |