SI3445DV by onsemi – Specifications

onsemi SI3445DV is a SI3445DV from onsemi, part of the MOSFETs. It is designed for 20V 5.5A 800mW 33mΩ@5.5A,4.5V 1.5V@250uA 1PCSPChannel SuperSOT-6 MOSFETs ROHS. This product comes in a SuperSOT-6 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 5.5A
  • Power Dissipation (Pd): 800mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@5.5A,4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.926nF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.046 grams.

Full Specifications of SI3445DV

Model NumberSI3445DV
Model Nameonsemi SI3445DV
CategoryMOSFETs
Brandonsemi
Description20V 5.5A 800mW 33mΩ@5.5A,4.5V 1.5V@250uA 1PCSPChannel SuperSOT-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.046 grams / 0.001623 oz
Package / CaseSuperSOT-6
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)5.5A
Power Dissipation (Pd)800mW
Drain Source On Resistance (RDS(on)@Vgs,Id)33mΩ@5.5A,4.5V
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.926nF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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