SI3454DV by onsemi – Specifications

onsemi SI3454DV is a SI3454DV from onsemi, part of the MOSFETs. It is designed for 30V 4.2A 800mW 65mΩ@4.2A,10V 2V@250uA 1PCSNChannel SuperSOT-6 MOSFETs ROHS. This product comes in a SuperSOT-6 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.2A
  • Power Dissipation (Pd): 800mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@4.2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 460pF@15V
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.046 grams.

Full Specifications of SI3454DV

Model NumberSI3454DV
Model Nameonsemi SI3454DV
CategoryMOSFETs
Brandonsemi
Description30V 4.2A 800mW 65mΩ@4.2A,10V 2V@250uA 1PCSNChannel SuperSOT-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.046 grams / 0.001623 oz
Package / CaseSuperSOT-6
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4.2A
Power Dissipation (Pd)800mW
Drain Source On Resistance (RDS(on)@Vgs,Id)65mΩ@4.2A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)460pF@15V
Total Gate Charge (Qg@Vgs)15nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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