onsemi SI3456DV is a SI3456DV from onsemi, part of the MOSFETs. It is designed for 30V 5.1A 800mW 45mΩ@5.1A,10V 2V@250uA 1PCSNChannel SuperSOT-6 MOSFETs ROHS. This product comes in a SuperSOT-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 5.1A
- Power Dissipation (Pd): 800mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 45mΩ@5.1A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 463pF@15V
- Total Gate Charge (Qg@Vgs): 12.6nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.046 grams.
More on SI3456DV
Full Specifications of SI3456DV
| Model Number | SI3456DV |
| Model Name | onsemi SI3456DV |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 5.1A 800mW 45mΩ@5.1A,10V 2V@250uA 1PCSNChannel SuperSOT-6 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.046 grams / 0.001623 oz |
| Package / Case | SuperSOT-6 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 5.1A |
| Power Dissipation (Pd) | 800mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 45mΩ@5.1A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 463pF@15V |
| Total Gate Charge (Qg@Vgs) | 12.6nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |