SI4420DY by onsemi – Specifications

onsemi SI4420DY is a SI4420DY from onsemi, part of the MOSFETs. It is designed for 30V 12.5A 9mΩ@12.5A,10V 2.5W 1V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 12.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@12.5A,10V
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.18nF@15V
  • Total Gate Charge (Qg@Vgs): 53nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.

Full Specifications of SI4420DY

Model NumberSI4420DY
Model Nameonsemi SI4420DY
CategoryMOSFETs
Brandonsemi
Description30V 12.5A 9mΩ@12.5A,10V 2.5W 1V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.215 grams / 0.007584 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)12.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@12.5A,10V
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.18nF@15V
Total Gate Charge (Qg@Vgs)53nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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