SI4463DY by onsemi – Specifications

onsemi SI4463DY is a SI4463DY from onsemi, part of the MOSFETs. It is designed for 20V 11.5A 12mΩ@11.5A,4.5V 1W 1.5V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 11.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@11.5A,4.5V
  • Power Dissipation (Pd): 1W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 4.481nF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.

Full Specifications of SI4463DY

Model NumberSI4463DY
Model Nameonsemi SI4463DY
CategoryMOSFETs
Brandonsemi
Description20V 11.5A 12mΩ@11.5A,4.5V 1W 1.5V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.215 grams / 0.007584 oz
Package / CaseSOIC-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)11.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@11.5A,4.5V
Power Dissipation (Pd)1W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)4.481nF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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