SI4466DY by onsemi – Specifications

onsemi SI4466DY is a SI4466DY from onsemi, part of the MOSFETs. It is designed for 20V 15A 7.5mΩ@15A,4.5V 1W 1.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 15A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@15A,4.5V
  • Power Dissipation (Pd): 1W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.7nF@10V
  • Total Gate Charge (Qg@Vgs): 66nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.

Full Specifications of SI4466DY

Model NumberSI4466DY
Model Nameonsemi SI4466DY
CategoryMOSFETs
Brandonsemi
Description20V 15A 7.5mΩ@15A,4.5V 1W 1.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.215 grams / 0.007584 oz
Package / CaseSOIC-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)15A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.5mΩ@15A,4.5V
Power Dissipation (Pd)1W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.7nF@10V
Total Gate Charge (Qg@Vgs)66nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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