STD5407NT4G by onsemi – Specifications

onsemi STD5407NT4G is a STD5407NT4G from onsemi, part of the MOSFETs. It is designed for 40V 26mΩ@20A,10V 3.5V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 7.6A;38A
  • Power Dissipation (Pd): 2.9W;75W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 26mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1nF@32V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.466 grams.

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Full Specifications of STD5407NT4G

Model NumberSTD5407NT4G
Model Nameonsemi STD5407NT4G
CategoryMOSFETs
Brandonsemi
Description40V 26mΩ@20A,10V 3.5V@250uA 1PCSNChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.466 grams / 0.016438 oz
Package / CaseDPAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)7.6A;38A
Power Dissipation (Pd)2.9W;75W
Drain Source On Resistance (RDS(on)@Vgs,Id)26mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1nF@32V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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