RU190N08R by Shenzhen ruichips Semicon – Specifications

Shenzhen ruichips Semicon RU190N08R is a RU190N08R from Shenzhen ruichips Semicon, part of the MOSFETs. It is designed for 80V 190A 312W 4.8mΩ@10V,40A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 190A
  • Power Dissipation (Pd): 312W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8mΩ@10V,40A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.75 grams.

More on RU190N08R

Full Specifications of RU190N08R

Model NumberRU190N08R
Model NameShenzhen ruichips Semicon RU190N08R
CategoryMOSFETs
BrandShenzhen ruichips Semicon
Description80V 190A 312W 4.8mΩ@10V,40A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.750 grams / 0.097003 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)190A
Power Dissipation (Pd)312W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.8mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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