Solid State System 2N2897 is a 2N2897 from Solid State System, part of the Bipolar Transistors - BJT. It is designed for 45V 500mW 50@150mA,10V 1A NPN TO-18 Bipolar Transistors - BJT ROHS. This product comes in a TO-18 package and is sold as Bag-packed. Key features include:
- Collector Cut-Off Current (Icbo): 5nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic,Vce): 50@150mA,10V
- Collector Current (Ic): 1A
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@15mA,150mA
- Transistor Type: NPN
- Operating Temperature: -65℃~+200℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
Full Specifications of 2N2897
| Model Number | 2N2897 |
| Model Name | Solid State System 2N2897 |
| Category | Bipolar Transistors - BJT |
| Brand | Solid State System |
| Description | 45V 500mW 50@150mA,10V 1A NPN TO-18 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-18 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 5nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Power Dissipation (Pd) | 500mW |
| DC Current Gain (hFE@Ic,Vce) | 50@150mA,10V |
| Collector Current (Ic) | 1A |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@15mA,150mA |
| Transistor Type | NPN |
| Operating Temperature | -65℃~+200℃@(Tj) |