Solid State System 2N4236 is a 2N4236 from Solid State System, part of the Bipolar Transistors - BJT. It is designed for 80V 1W 40@100mA,1V 1A PNP TO-39 Bipolar Transistors - BJT ROHS. This product comes in a TO-39 package and is sold as Bag-packed. Key features include:
- Collector Cut-Off Current (Icbo): 1mA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Power Dissipation (Pd): 1W
- DC Current Gain (hFE@Ic,Vce): 40@100mA,1V
- Collector Current (Ic): 1A
- Transition Frequency (fT): 3MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@125mA,1A
- Transistor Type: PNP
- Operating Temperature: -65℃~+200℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
Full Specifications of 2N4236
| Model Number | 2N4236 |
| Model Name | Solid State System 2N4236 |
| Category | Bipolar Transistors - BJT |
| Brand | Solid State System |
| Description | 80V 1W 40@100mA,1V 1A PNP TO-39 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-39 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Power Dissipation (Pd) | 1W |
| DC Current Gain (hFE@Ic,Vce) | 40@100mA,1V |
| Collector Current (Ic) | 1A |
| Transition Frequency (fT) | 3MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@125mA,1A |
| Transistor Type | PNP |
| Operating Temperature | -65℃~+200℃@(Tj) |