Solid State System 2N6430 is a 2N6430 from Solid State System, part of the Bipolar Transistors - BJT. It is designed for 200V 500mW 50@30mA,10V 50mA NPN TO-18 Bipolar Transistors - BJT ROHS. This product comes in a TO-18 package and is sold as Bag-packed. Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 200V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic,Vce): 50@30mA,10V
- Collector Current (Ic): 50mA
- Transition Frequency (fT): 500MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@2mA,20mA
- Transistor Type: NPN
- Operating Temperature: -65℃~+200℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
Full Specifications of 2N6430
| Model Number | 2N6430 |
| Model Name | Solid State System 2N6430 |
| Category | Bipolar Transistors - BJT |
| Brand | Solid State System |
| Description | 200V 500mW 50@30mA,10V 50mA NPN TO-18 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-18 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 200V |
| Power Dissipation (Pd) | 500mW |
| DC Current Gain (hFE@Ic,Vce) | 50@30mA,10V |
| Collector Current (Ic) | 50mA |
| Transition Frequency (fT) | 500MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@2mA,20mA |
| Transistor Type | NPN |
| Operating Temperature | -65℃~+200℃@(Tj) |