2SA1106 by SPTECH – Specifications

SPTECH 2SA1106 is a 2SA1106 from SPTECH, part of the Bipolar Transistors - BJT. It is designed for 140V 100W 30@3A,4V 10A PNP TO-3PN Bipolar Transistors - BJT ROHS. This product comes in a TO-3PN package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 140V
  • Power Dissipation (Pd): 100W
  • DC Current Gain (hFE@Ic,Vce): 30@3A,4V
  • Collector Current (Ic): 10A
  • Transition Frequency (fT): 20MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2V@5A,500mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.53 grams.

Full Specifications of 2SA1106

Model Number2SA1106
Model NameSPTECH 2SA1106
CategoryBipolar Transistors - BJT
BrandSPTECH
Description140V 100W 30@3A,4V 10A PNP TO-3PN Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.530 grams / 0.230339 oz
Package / CaseTO-3PN
Package / ArrangeTube-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100uA
Collector-Emitter Breakdown Voltage (Vceo)140V
Power Dissipation (Pd)100W
DC Current Gain (hFE@Ic,Vce)30@3A,4V
Collector Current (Ic)10A
Transition Frequency (fT)20MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)2V@5A,500mA
Transistor TypePNP
Operating Temperature-

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