2SD998 by SPTECH – Specifications

SPTECH 2SD998 is a 2SD998 from SPTECH, part of the Bipolar Transistors - BJT. It is designed for 120V 80W 60@5A,1V 10A NPN TO-3PN Bipolar Transistors - BJT ROHS. This product comes in a TO-3PN package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 120V
  • Power Dissipation (Pd): 80W
  • DC Current Gain (hFE@Ic,Vce): 60@5A,1V
  • Collector Current (Ic): 10A
  • Transition Frequency (fT): 18MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@5A,80mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.6 grams.

Full Specifications of 2SD998

Model Number2SD998
Model NameSPTECH 2SD998
CategoryBipolar Transistors - BJT
BrandSPTECH
Description120V 80W 60@5A,1V 10A NPN TO-3PN Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.600 grams / 0.232808 oz
Package / CaseTO-3PN
Package / ArrangeTube-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)10uA
Collector-Emitter Breakdown Voltage (Vceo)120V
Power Dissipation (Pd)80W
DC Current Gain (hFE@Ic,Vce)60@5A,1V
Collector Current (Ic)10A
Transition Frequency (fT)18MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@5A,80mA
Transistor TypeNPN
Operating Temperature-

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