MJW3281A by SPTECH – Specifications

SPTECH MJW3281A is a MJW3281A from SPTECH, part of the Bipolar Transistors - BJT. It is designed for 250V 200W 50@1A,5V 15A NPN TO-3PN Bipolar Transistors - BJT ROHS. This product comes in a TO-3PN package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 50uA
  • Collector-Emitter Breakdown Voltage (Vceo): 250V
  • Power Dissipation (Pd): 200W
  • DC Current Gain (hFE@Ic,Vce): 50@1A,5V
  • Collector Current (Ic): 15A
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2V@10A,1A
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.43 grams.

Full Specifications of MJW3281A

Model NumberMJW3281A
Model NameSPTECH MJW3281A
CategoryBipolar Transistors - BJT
BrandSPTECH
Description250V 200W 50@1A,5V 15A NPN TO-3PN Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.430 grams / 0.226812 oz
Package / CaseTO-3PN
Package / ArrangeTube-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)50uA
Collector-Emitter Breakdown Voltage (Vceo)250V
Power Dissipation (Pd)200W
DC Current Gain (hFE@Ic,Vce)50@1A,5V
Collector Current (Ic)15A
Transition Frequency (fT)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)2V@10A,1A
Transistor TypeNPN
Operating Temperature-

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