A2P75S12M3 by STMicroelectronics – Specifications

STMicroelectronics A2P75S12M3 is a A2P75S12M3 from STMicroelectronics, part of the IGBTs. It is designed for 454.5W 75A 1.2kV FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 454.5W
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 75A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 4.7nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.3V@15V,75A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of A2P75S12M3

Model NumberA2P75S12M3
Model NameSTMicroelectronics A2P75S12M3
CategoryIGBTs
BrandSTMicroelectronics
Description454.5W 75A 1.2kV FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)454.5W
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)4.7nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.3V@15V,75A

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