STGF10NB60SD by STMicroelectronics – Specifications

STMicroelectronics STGF10NB60SD is a STGF10NB60SD from STMicroelectronics, part of the IGBTs. It is designed for 25W 23A 600V TO-220FP-3 IGBTs ROHS. This product comes in a TO-220FP-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 1.2us
  • Power Dissipation (Pd): 25W
  • Turn?on Delay Time (Td(on)): 700ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 23A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.75V@15V,10A
  • Total Gate Charge (Qg@Ic,Vge): 33nC
  • Diode Reverse Recovery Time (Trr): 37ns
  • Turn?off Switching Loss (Eoff): 5mJ
  • Turn?on Switching Loss (Eon): 0.6mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.22 grams.

More on STGF10NB60SD

Full Specifications of STGF10NB60SD

Model NumberSTGF10NB60SD
Model NameSTMicroelectronics STGF10NB60SD
CategoryIGBTs
BrandSTMicroelectronics
Description25W 23A 600V TO-220FP-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.220 grams / 0.078308 oz
Package / CaseTO-220FP-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))1.2us
Power Dissipation (Pd)25W
Turn?on Delay Time (Td(on))700ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)23A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.75V@15V,10A
Total Gate Charge (Qg@Ic,Vge)33nC
Diode Reverse Recovery Time (Trr)37ns
Turn?off Switching Loss (Eoff)5mJ
Turn?on Switching Loss (Eon)0.6mJ

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