STGB20V60DF by STMicroelectronics – Specifications

STMicroelectronics STGB20V60DF is a STGB20V60DF from STMicroelectronics, part of the IGBTs. It is designed for 167W 40A 600V FS(Field Stop) D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 149ns
  • Power Dissipation (Pd): 167W
  • Turn?on Delay Time (Td(on)): 38ns
  • Collector Current (Ic): 40A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,20A
  • Total Gate Charge (Qg@Ic,Vge): 116nC
  • Diode Reverse Recovery Time (Trr): 40ns
  • Turn?off Switching Loss (Eoff): 0.13mJ
  • Turn?on Switching Loss (Eon): 0.2mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on STGB20V60DF

Full Specifications of STGB20V60DF

Model NumberSTGB20V60DF
Model NameSTMicroelectronics STGB20V60DF
CategoryIGBTs
BrandSTMicroelectronics
Description167W 40A 600V FS(Field Stop) D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))149ns
Power Dissipation (Pd)167W
Turn?on Delay Time (Td(on))38ns
Operating Temperature-
Collector Current (Ic)40A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,20A
Total Gate Charge (Qg@Ic,Vge)116nC
Diode Reverse Recovery Time (Trr)40ns
Turn?off Switching Loss (Eoff)0.13mJ
Turn?on Switching Loss (Eon)0.2mJ

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