STGD6M65DF2 by STMicroelectronics – Specifications

STMicroelectronics STGD6M65DF2 is a STGD6M65DF2 from STMicroelectronics, part of the IGBTs. It is designed for 88W 12A 650V FS(Field Stop) TO-252 IGBTs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 90ns
  • Power Dissipation (Pd): 88W
  • Turn?on Delay Time (Td(on)): 15ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 12A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,6A
  • Total Gate Charge (Qg@Ic,Vge): 21.2nC
  • Diode Reverse Recovery Time (Trr): 140ns
  • Turn?off Switching Loss (Eoff): 0.2mJ
  • Turn?on Switching Loss (Eon): 0.036mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.41 grams.

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Full Specifications of STGD6M65DF2

Model NumberSTGD6M65DF2
Model NameSTMicroelectronics STGD6M65DF2
CategoryIGBTs
BrandSTMicroelectronics
Description88W 12A 650V FS(Field Stop) TO-252 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.410 grams / 0.014462 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))90ns
Power Dissipation (Pd)88W
Turn?on Delay Time (Td(on))15ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)12A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,6A
Total Gate Charge (Qg@Ic,Vge)21.2nC
Diode Reverse Recovery Time (Trr)140ns
Turn?off Switching Loss (Eoff)0.2mJ
Turn?on Switching Loss (Eon)0.036mJ

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