STGD10HF60KD by STMicroelectronics – Specifications

STMicroelectronics STGD10HF60KD is a STGD10HF60KD from STMicroelectronics, part of the IGBTs. It is designed for 62.5W 18A 600V DPAK IGBTs ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 87ns
  • Power Dissipation (Pd): 62.5W
  • Turn?on Delay Time (Td(on)): 9.5ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 18A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.75V@15V,5A
  • Total Gate Charge (Qg@Ic,Vge): 23nC
  • Diode Reverse Recovery Time (Trr): 50ns
  • Turn?off Switching Loss (Eoff): 0.105mJ
  • Turn?on Switching Loss (Eon): 0.045mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.476 grams.

More on STGD10HF60KD

Full Specifications of STGD10HF60KD

Model NumberSTGD10HF60KD
Model NameSTMicroelectronics STGD10HF60KD
CategoryIGBTs
BrandSTMicroelectronics
Description62.5W 18A 600V DPAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.476 grams / 0.01679 oz
Package / CaseDPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))87ns
Power Dissipation (Pd)62.5W
Turn?on Delay Time (Td(on))9.5ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)18A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.75V@15V,5A
Total Gate Charge (Qg@Ic,Vge)23nC
Diode Reverse Recovery Time (Trr)50ns
Turn?off Switching Loss (Eoff)0.105mJ
Turn?on Switching Loss (Eon)0.045mJ

Compare STMicroelectronics - STGD10HF60KD With Other 200 Models

Related Models - STGD10HF60KD Alternative

Scroll to Top