STGD4M65DF2 by STMicroelectronics – Specifications

STMicroelectronics STGD4M65DF2 is a STGD4M65DF2 from STMicroelectronics, part of the IGBTs. It is designed for 68W 8A 650V FS(Field Stop) TO-252-2(DPAK) IGBTs ROHS. This product comes in a TO-252-2(DPAK) package and is sold as null. Key features include:

  • Turn?off Delay Time (Td(off)): 86ns
  • Power Dissipation (Pd): 68W
  • Turn?on Delay Time (Td(on)): 12ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 8A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,4A
  • Total Gate Charge (Qg@Ic,Vge): 15.2nC
  • Diode Reverse Recovery Time (Trr): 133ns
  • Turn?off Switching Loss (Eoff): 0.136mJ
  • Turn?on Switching Loss (Eon): 0.04mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.8 grams.

More on STGD4M65DF2

Full Specifications of STGD4M65DF2

Model NumberSTGD4M65DF2
Model NameSTMicroelectronics STGD4M65DF2
CategoryIGBTs
BrandSTMicroelectronics
Description68W 8A 650V FS(Field Stop) TO-252-2(DPAK) IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.800 grams / 0.028219 oz
Package / CaseTO-252-2(DPAK)
Package / Arrange
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))86ns
Power Dissipation (Pd)68W
Turn?on Delay Time (Td(on))12ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)8A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,4A
Total Gate Charge (Qg@Ic,Vge)15.2nC
Diode Reverse Recovery Time (Trr)133ns
Turn?off Switching Loss (Eoff)0.136mJ
Turn?on Switching Loss (Eon)0.04mJ

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