STGD5H60DF by STMicroelectronics – Specifications

STMicroelectronics STGD5H60DF is a STGD5H60DF from STMicroelectronics, part of the IGBTs. It is designed for 83W 10A 600V FS(Field Stop) DPAK IGBTs ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 140ns
  • Power Dissipation (Pd): 83W
  • Turn?on Delay Time (Td(on)): 30ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 10A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V,5A
  • Total Gate Charge (Qg@Ic,Vge): 43nC
  • Diode Reverse Recovery Time (Trr): 134.5ns
  • Turn?off Switching Loss (Eoff): 0.0785mJ
  • Turn?on Switching Loss (Eon): 0.056mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.476 grams.

More on STGD5H60DF

Full Specifications of STGD5H60DF

Model NumberSTGD5H60DF
Model NameSTMicroelectronics STGD5H60DF
CategoryIGBTs
BrandSTMicroelectronics
Description83W 10A 600V FS(Field Stop) DPAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.476 grams / 0.01679 oz
Package / CaseDPAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))140ns
Power Dissipation (Pd)83W
Turn?on Delay Time (Td(on))30ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)10A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.95V@15V,5A
Total Gate Charge (Qg@Ic,Vge)43nC
Diode Reverse Recovery Time (Trr)134.5ns
Turn?off Switching Loss (Eoff)0.0785mJ
Turn?on Switching Loss (Eon)0.056mJ

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