STGF10H60DF by STMicroelectronics – Specifications

STMicroelectronics STGF10H60DF is a STGF10H60DF from STMicroelectronics, part of the IGBTs. It is designed for 30W 20A 600V FS(Field Stop) TO-220FP IGBTs ROHS. This product comes in a TO-220FP package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 103ns
  • Power Dissipation (Pd): 30W
  • Turn?on Delay Time (Td(on)): 19.5ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 20A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V,10A
  • Total Gate Charge (Qg@Ic,Vge): 57nC
  • Diode Reverse Recovery Time (Trr): 107ns
  • Turn?off Switching Loss (Eoff): 0.14mJ
  • Turn?on Switching Loss (Eon): 0.083mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.676 grams.

More on STGF10H60DF

Full Specifications of STGF10H60DF

Model NumberSTGF10H60DF
Model NameSTMicroelectronics STGF10H60DF
CategoryIGBTs
BrandSTMicroelectronics
Description30W 20A 600V FS(Field Stop) TO-220FP IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.676 grams / 0.094393 oz
Package / CaseTO-220FP
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))103ns
Power Dissipation (Pd)30W
Turn?on Delay Time (Td(on))19.5ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)20A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.95V@15V,10A
Total Gate Charge (Qg@Ic,Vge)57nC
Diode Reverse Recovery Time (Trr)107ns
Turn?off Switching Loss (Eoff)0.14mJ
Turn?on Switching Loss (Eon)0.083mJ

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