STGW30NC60KD by STMicroelectronics – Specifications

STMicroelectronics STGW30NC60KD is a STGW30NC60KD from STMicroelectronics, part of the IGBTs. It is designed for 200W 60A 600V TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 120ns
  • Power Dissipation (Pd): 200W
  • Turn?on Delay Time (Td(on)): 29ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.7V@15V,20A
  • Total Gate Charge (Qg@Ic,Vge): 96nC
  • Diode Reverse Recovery Time (Trr): 40ns
  • Turn?off Switching Loss (Eoff): 0.435mJ
  • Turn?on Switching Loss (Eon): 0.35mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.538 grams.

More on STGW30NC60KD

Full Specifications of STGW30NC60KD

Model NumberSTGW30NC60KD
Model NameSTMicroelectronics STGW30NC60KD
CategoryIGBTs
BrandSTMicroelectronics
Description200W 60A 600V TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.538 grams / 0.230621 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))120ns
Power Dissipation (Pd)200W
Turn?on Delay Time (Td(on))29ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.7V@15V,20A
Total Gate Charge (Qg@Ic,Vge)96nC
Diode Reverse Recovery Time (Trr)40ns
Turn?off Switching Loss (Eoff)0.435mJ
Turn?on Switching Loss (Eon)0.35mJ

Compare STMicroelectronics - STGW30NC60KD With Other 200 Models

Related Models - STGW30NC60KD Alternative

Scroll to Top