CS12N65FA9R by Wuxi China Resources Huajing Microelectronics – Specifications

Wuxi China Resources Huajing Microelectronics CS12N65FA9R is a CS12N65FA9R from Wuxi China Resources Huajing Microelectronics, part of the MOSFETs. It is designed for 650V 12A 800mΩ@10V,6A 42W 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS. This product comes in a TO-220F package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 12A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@10V,6A
• Power Dissipation (Pd): 42W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
• Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.82 grams.