Wuxi China Resources Huajing Microelectronics CS4N60A3HD is a CS4N60A3HD from Wuxi China Resources Huajing Microelectronics, part of the MOSFETs. It is designed for 600V 4A 75W 2.3Ω@10V,2A 4V@250uA 1PCSNChannel TO-251(IPAK) MOSFETs ROHS. This product comes in a TO-251(IPAK) package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 4A
- Power Dissipation (Pd): 75W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3Ω@10V,2A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.6 grams.
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Full Specifications of CS4N60A3HD
| Model Number | CS4N60A3HD |
| Model Name | Wuxi China Resources Huajing Microelectronics CS4N60A3HD |
| Category | MOSFETs |
| Brand | Wuxi China Resources Huajing Microelectronics |
| Description | 600V 4A 75W 2.3Ω@10V,2A 4V@250uA 1PCSNChannel TO-251(IPAK) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.600 grams / 0.021164 oz |
| Package / Case | TO-251(IPAK) |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 4A |
| Power Dissipation (Pd) | 75W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.3Ω@10V,2A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |