CS4N65FA9HD by Wuxi China Resources Huajing Microelectronics – Specifications

Wuxi China Resources Huajing Microelectronics CS4N65FA9HD is a CS4N65FA9HD from Wuxi China Resources Huajing Microelectronics, part of the MOSFETs. It is designed for 650V 4A 2.5Ω@10V,2A 30W 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS. This product comes in a TO-220F package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@10V,2A
  • Power Dissipation (Pd): 30W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.82 grams.

More on CS4N65FA9HD

Full Specifications of CS4N65FA9HD

Model NumberCS4N65FA9HD
Model NameWuxi China Resources Huajing Microelectronics CS4N65FA9HD
CategoryMOSFETs
BrandWuxi China Resources Huajing Microelectronics
Description650V 4A 2.5Ω@10V,2A 30W 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.820 grams / 0.099473 oz
Package / CaseTO-220F
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)4A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.5Ω@10V,2A
Power Dissipation (Pd)30W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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