| Model Number |
| 2N2222 |
D44C12 |
| Model Name |
| Solid State System 2N2222 |
Solid State System D44C12 |
| Category |
| Bipolar Transistors - BJT |
Bipolar Transistors - BJT |
| Brand |
| Solid State System |
Solid State System |
| Description |
| 30V 500mW 100@150mA,10V 800mA NPN TO-18 Bipolar Transistors - BJT ROHS |
80V 30W 40@200mA,1V 4A NPN TO-220 Bipolar Transistors - BJT ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-18 |
TO-220 |
| Package / Arrange |
| Bag-packed |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Collector Cut-Off Current (Icbo) |
| 10nA |
10uA |
| Collector-Emitter Breakdown Voltage (Vceo) |
| 30V |
80V |
| Power Dissipation (Pd) |
| 500mW |
30W |
| DC Current Gain (hFE@Ic,Vce) |
| 100@150mA,10V |
40@200mA,1V |
| Collector Current (Ic) |
| 800mA |
4A |
| Transition Frequency (fT) |
| 250MHz |
50MHz |
| Transistor Type |
| NPN |
NPN |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
| 1.6V@50mA,500mA |
500mV@50mA,1A |
| Operating Temperature |
| -65℃~+200℃@(Tj) |
-55℃~+150℃@(Tj) |
