2N2222 by Solid State System – Specifications

Solid State System 2N2222 is a 2N2222 from Solid State System, part of the Bipolar Transistors - BJT. It is designed for 30V 500mW 100@150mA,10V 800mA NPN TO-18 Bipolar Transistors - BJT ROHS. This product comes in a TO-18 package and is sold as Bag-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 10nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 500mW
  • DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
  • Collector Current (Ic): 800mA
  • Transition Frequency (fT): 250MHz
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.6V@50mA,500mA
  • Operating Temperature: -65℃~+200℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of 2N2222

Model Number2N2222
Model NameSolid State System 2N2222
CategoryBipolar Transistors - BJT
BrandSolid State System
Description30V 500mW 100@150mA,10V 800mA NPN TO-18 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-18
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)10nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)500mW
DC Current Gain (hFE@Ic,Vce)100@150mA,10V
Collector Current (Ic)800mA
Transition Frequency (fT)250MHz
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1.6V@50mA,500mA
Operating Temperature-65℃~+200℃@(Tj)

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