| Model Number |
| 2N3110 |
2N4236 |
| Model Name |
| Solid State System 2N3110 |
Solid State System 2N4236 |
| Category |
| Bipolar Transistors - BJT |
Bipolar Transistors - BJT |
| Brand |
| Solid State System |
Solid State System |
| Description |
| 40V 800mW 40@150mA,1V 1A NPN TO-39 Bipolar Transistors - BJT ROHS |
80V 1W 40@100mA,1V 1A PNP TO-39 Bipolar Transistors - BJT ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-39 |
TO-39 |
| Package / Arrange |
| Box-packed |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Collector Cut-Off Current (Icbo) |
| 10nA |
1mA |
| Collector-Emitter Breakdown Voltage (Vceo) |
| 40V |
80V |
| Power Dissipation (Pd) |
| 800mW |
1W |
| DC Current Gain (hFE@Ic,Vce) |
| 40@150mA,1V |
40@100mA,1V |
| Collector Current (Ic) |
| 1A |
1A |
| Transition Frequency (fT) |
| 60MHz |
3MHz |
| Transistor Type |
| NPN |
PNP |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
| 1V@100mA,1A |
600mV@125mA,1A |
| Operating Temperature |
| -65℃~+200℃@(Tj) |
-65℃~+200℃@(Tj) |
