| Model Number |
| 2N4240 |
2N5415 |
| Model Name |
| Solid State System 2N4240 |
Solid State System 2N5415 |
| Category |
| Bipolar Transistors - BJT |
Bipolar Transistors - BJT |
| Brand |
| Solid State System |
Solid State System |
| Description |
| 300V 35W 30@750mA,10V 2A NPN TO-66 Bipolar Transistors - BJT ROHS |
200V 1W 30@50mA,10V 1A PNP TO-39 Bipolar Transistors - BJT ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-66 |
TO-39 |
| Package / Arrange |
| Box-packed |
N/A |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Collector Cut-Off Current (Icbo) |
| 5mA |
50uA |
| Collector-Emitter Breakdown Voltage (Vceo) |
| 300V |
200V |
| Power Dissipation (Pd) |
| 35W |
1W |
| DC Current Gain (hFE@Ic,Vce) |
| 30@750mA,10V |
30@50mA,10V |
| Collector Current (Ic) |
| 2A |
1A |
| Transistor Type |
| NPN |
PNP |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
| 1V@75mA,750mA |
2.5V@5mA,50mA |
| Operating Temperature |
| -65℃~+200℃@(Tj) |
N/A |
