2N4240 by Solid State System – Specifications

Solid State System 2N4240 is a 2N4240 from Solid State System, part of the Bipolar Transistors - BJT. It is designed for 300V 35W 30@750mA,10V 2A NPN TO-66 Bipolar Transistors - BJT ROHS. This product comes in a TO-66 package and is sold as Box-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 5mA
  • Collector-Emitter Breakdown Voltage (Vceo): 300V
  • Power Dissipation (Pd): 35W
  • DC Current Gain (hFE@Ic,Vce): 30@750mA,10V
  • Collector Current (Ic): 2A
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@75mA,750mA
  • Operating Temperature: -65℃~+200℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of 2N4240

Model Number2N4240
Model NameSolid State System 2N4240
CategoryBipolar Transistors - BJT
BrandSolid State System
Description300V 35W 30@750mA,10V 2A NPN TO-66 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-66
Package / ArrangeBox-packed
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)5mA
Collector-Emitter Breakdown Voltage (Vceo)300V
Power Dissipation (Pd)35W
DC Current Gain (hFE@Ic,Vce)30@750mA,10V
Collector Current (Ic)2A
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1V@75mA,750mA
Operating Temperature-65℃~+200℃@(Tj)

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