BC847DW by CBI – Specifications

CBI BC847DW is a BC847DW from CBI, part of the Bipolar Transistors - BJT. It is designed for 45V 200mW 100mA NPN SOT-363 Bipolar Transistors - BJT ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Power Dissipation (Pd): 200mW
  • Collector Current (Ic): 100mA
  • Transition Frequency (fT): 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@100mA,5mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.028 grams.

More on BC847DW

Full Specifications of BC847DW

Model NumberBC847DW
Model NameCBI BC847DW
CategoryBipolar Transistors - BJT
BrandCBI
Description45V 200mW 100mA NPN SOT-363 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.028 grams / 0.000988 oz
Package / CaseSOT-363
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)15nA
Collector-Emitter Breakdown Voltage (Vceo)45V
Power Dissipation (Pd)200mW
Collector Current (Ic)100mA
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)300mV@100mA,5mA
Transistor TypeNPN
Operating Temperature-

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