BC857DW by CBI – Specifications

CBI BC857DW is a BC857DW from CBI, part of the Bipolar Transistors - BJT. It is designed for 45V 300mW 125@2mA,5V 200mA PNP SOT-363 Bipolar Transistors - BJT ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Power Dissipation (Pd): 300mW
  • DC Current Gain (hFE@Ic,Vce): 125@2mA,5V
  • Collector Current (Ic): 200mA
  • Transition Frequency (fT): 200MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@100mA,5mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.028 grams.

More on BC857DW

Full Specifications of BC857DW

Model NumberBC857DW
Model NameCBI BC857DW
CategoryBipolar Transistors - BJT
BrandCBI
Description45V 300mW 125@2mA,5V 200mA PNP SOT-363 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.028 grams / 0.000988 oz
Package / CaseSOT-363
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)15nA
Collector-Emitter Breakdown Voltage (Vceo)45V
Power Dissipation (Pd)300mW
DC Current Gain (hFE@Ic,Vce)125@2mA,5V
Collector Current (Ic)200mA
Transition Frequency (fT)200MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)650mV@100mA,5mA
Transistor TypePNP
Operating Temperature-

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