MMBT5401T by CBI – Specifications

CBI MMBT5401T is a MMBT5401T from CBI, part of the Bipolar Transistors - BJT. It is designed for 150V 200mW 60@10mA,5V 600mA PNP SOT-523-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-523-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 150V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 60@10mA,5V
  • Collector Current (Ic): 600mA
  • Transition Frequency (fT): 100MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@10mA,1mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.025 grams.

More on MMBT5401T

Full Specifications of MMBT5401T

Model NumberMMBT5401T
Model NameCBI MMBT5401T
CategoryBipolar Transistors - BJT
BrandCBI
Description150V 200mW 60@10mA,5V 600mA PNP SOT-523-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.025 grams / 0.000882 oz
Package / CaseSOT-523-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)50nA
Collector-Emitter Breakdown Voltage (Vceo)150V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)60@10mA,5V
Collector Current (Ic)600mA
Transition Frequency (fT)100MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)200mV@10mA,1mA
Operating Temperature-

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